首页> 外文OA文献 >Ultra-low coercive field of improper ferroelectric Ca3Ti2O7 epitaxial thin films
【2h】

Ultra-low coercive field of improper ferroelectric Ca3Ti2O7 epitaxial thin films

机译:铁电Ca3Ti2O7外延薄膜的超低矫顽场

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。
获取外文期刊封面目录资料

摘要

Hybrid improper ferroelectrics have their electric polarization generated by two or more combined non-ferroelectric structural distortions, such as the rotation and tilting of Ti-O octahedral in the Ca3Ti2O7 (CTO) family. In this work, we prepare the high quality (010)-oriented CTO thin films on (110) SrTiO3 (STO) substrates by pulsed laser deposition. The good epitaxial growth of the CTO thin films on the substrates with the interfacial epitaxial relationship of [001]CTO//[001]STO and [100]CTO//[-110]STO is revealed. The in-plane ferroelectric hysteresis unveils an ultralow coercive field of ∼5 kV/cm even at low temperature, nearly two orders of magnitude lower than that of bulk CTO single crystals. The huge difference between the epitaxial thin films and bulk crystals is most likely due to the lattice imperfections in the thin films rather than substrate induced lattice strains, suggesting high sensitivity of the ferroelectric properties to lattice defects.
机译:混合不当铁电体的电极化是由两个或多个组合的非铁电结构畸变产生的,例如Ca3Ti2O7(CTO)系列中Ti-O八面体的旋转和倾斜。在这项工作中,我们通过脉冲激光沉积在(110)SrTiO3(STO)基板上制备高质量(010)取向的CTO薄膜。揭示了具有[001] CTO // [001] STO和[100] CTO // [-110] STO的界面外延关系的CTO薄膜在衬底上的良好外延生长。即使在低温下,面内铁电磁滞也可显示出约5 kV / cm的超低矫顽力,比块状CTO单晶低近两个数量级。外延薄膜和块状晶体之间的巨大差异很可能是由于薄膜中的晶格缺陷而不是衬底引起的晶格应变,这表明铁电特性对晶格缺陷具有很高的敏感性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号